US3921916A - Nozzles formed in monocrystalline silicon - Google Patents
Nozzles formed in monocrystalline silicon Download PDFInfo
- Publication number
- US3921916A US3921916A US537799A US53779974A US3921916A US 3921916 A US3921916 A US 3921916A US 537799 A US537799 A US 537799A US 53779974 A US53779974 A US 53779974A US 3921916 A US3921916 A US 3921916A
- Authority
- US
- United States
- Prior art keywords
- silicon
- cross
- nozzle
- sectional area
- nozzles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000012528 membrane Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 26
- 239000010703 silicon Substances 0.000 abstract description 26
- 238000005530 etching Methods 0.000 abstract description 17
- 239000012530 fluid Substances 0.000 abstract description 16
- 239000012535 impurity Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 230000000873 masking effect Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000007641 inkjet printing Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000001243 acetic acids Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B9/00—Blowing glass; Production of hollow glass articles
- C03B9/30—Details of blowing glass; Use of materials for the moulds
- C03B9/32—Giving special shapes to parts of hollow glass articles
- C03B9/33—Making hollow glass articles with feet or projections; Moulds therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14475—Structure thereof only for on-demand ink jet heads characterised by nozzle shapes or number of orifices per chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S239/00—Fluid sprinkling, spraying, and diffusing
- Y10S239/19—Nozzle materials
Definitions
- ABSTRACT Method for producing a predetermined pattern of small size fluid nozzles of identical or different geometries in crystallographically oriented monocrystalline silicon or similar material utilizing anisotropic etching through the silicon to an integral etch resistant barrier layer heavily doped with P type impurities.
- single fluid nozzles or arrays of fluid nozzles which for example may be used in ink jet printers, were generally made of tubes which are single structures. These nozzles were formed by drilling holes in plates by mechanical or electromechanical means, by the use of an electron beam or a laser or the like. These plates are formed for example of stainless steel, glass or quartz, vitreous carbon, jewels such as sapphire and the like.
- the techniques set forth above suffer from at least some of the following disadvantages, namely (1) generally a single nozzle is formed, (2) the control of the individual size of nozzles is relatively poor, (3) fabrication of arrays of such nozzles is even more difficult, with attendant nonuniformity of size of holes and spatial distribution of the array.
- a jet of ink is forced through a vibrating nozzle causing the jet of ink to break up into droplets of equal size.
- Printing is effected by controlling the flight of the droplets to a target such as paper.
- individual nozzles or an array of such nozzles may be batch fabricated easily due to the crystallographic perfection of the starting material, namely the semiconductor used, which for example may be silicon and the selectivity of the etchant.
- the semiconductor used which for example may be silicon and the selectivity of the etchant.
- There is a high degree of control of nozzle size resulting from precise control of processes used in fabrication, namely the formation of diffused layers with required dopant concentrations; control of etch rates of semiconductor material as a function of its crystallographic orientation and of its conductivity type and dopant concentration.
- the etch rate of anisotropic etching solutions is controlled as a function of their composition and temperature and the process environmental characteristics.
- the same degree of control is obtainable as for a single nozzle, as is the control of spatial distribution and uniformity of hole size due to high control of the photolithographic process.
- the orifice like properties of the instant nozzles are better than those of pipes because wall effects are minimized. Since the nozzle, according to the present invention, is tapered from the entrance orifice to the exit orifice, the wall effects are substantially reduced.
- Another advantage of the nozzle of the present invention is that inspection of a given nozzle may be done visually and such inspection is sufficient to anticipate the performance of the individual nozzle. That is, the nozzle is inspected for orifice size and integrity of the structure, without having to actually check the performance of the nozzle in an ink jet printer.
- the nozzle of the present invention may pass fluid in either direction, but in the preferred mode of operation fluid flow is in the direction of the larger opening to the smaller opening of the nozzle since there is less pressure drop.
- the present invention employs anisotropic etching of monocrystalline silicon, crystallographically oriented, in order to produce one or a plurality, i.e., an array, of identically or unidentically shaped nozzles or holes in a thin monocrystalline semiconductor wafer.
- the holes are generally of 25 micrometers or less in diameter at the surface of the wafer and are positioned in a background window or membrane due to the anisotropic etching effect on the underlying crystallographically oriented monocrystalline silicon.
- geometrical design of the hole may be varied in a predetermined manner, i.e., triangles, rectangles or squares may be produced in place of circular holes.
- the wafer may then be employed as a nozzle in process and/or apparatus designs requiring the feeding of fluid through holes of 25 micrometers or less in diameter, such as in magnetic and electrostatic ink jet processes, and other gas or liquid metering and filtering systems requiring calibrated single or multiple orifices.
- the wafer produced by the process of this invention is characterized by a pattern of a plurality of orifices which may also be employed as a substrate for wiring and packaging integrated circuits and other solid state components, or a filter or guide for electromagnetic radiation.
- Another object of this invention is to provide a process for producing a single hole or a plurality of holes of predetermined shape and size in a semiconductor wafer of crystallographically oriented monocrystalline silicon for forming nozzles.
- a further object of this invention is to provide a process for producing holes of diminishing cross-section, from one side to the other, through a thin semiconductor wafer for forming nozzles.
- a process for producing nozzle(s) comprising one of a plurality of apertures in a thin crystallographically oriented non-p monocrystalline silicon material comprising forming an aperture mask on one surface of the silicon material, forming a p surface layer on the non-masked areas of said one surface, anisotropically etching a tunnel from 3 the opposite surface of said silicon material through to the masked area of said one surface and removing the mask.
- a p layer is formed on a surface, a tunnel is anisotropically etched from another surface to said p layer and the area of the p layer over said tunnel corresponding to the aperture is removed.
- the p layer is formed by diffusion of ion implantation into or epitaxial growth on the surface of the monocrystalline silicon body.
- Preferred plane orientations for the monocrystalline silicon are to provide preferential etching along the (100), (1 l) and (l 1 l) oriented silicon planes.
- the p barrier layer is defined as containing a p-type dopant atom concentration l0 cm preferably a concentration 3 7 X lO cm DESCRIPTION OF THE DRAWING FIGS. 1-4 represent sequential cross-sectional views of a silicon wafer processed in accordance with this invention
- FIGS. 5 and 6 illustrate front and cross-sectional views of a nozzle produced in accordance with the sequence illustrated by FIGS. 1-4.
- FIGS. 79 represent sequential cross-sectional views of a silicon wafer processed by another example of the process of this invention.
- the present invention is a process for chemically drilling a hole through monocrystalline silicon using an anisotropic etchant for forming a fluid nozzle or an array of such fluid nozzles.
- Anistropic or preferential etchants attack solid materials in different directions at different rates.
- Numerous anisotropic etchants are known for monocrystalline silicon which include alkaline liquids or mixtures thereof.
- common single crystal silicon anisotropic etchants there may be mentioned aqueous sodium hydroxide, aqueous potassium hydroxide, aqueous hydrazine, tetramethyl ammonium hydroxide, mixtures of phenols and amines such as a mixture of pyrocatechol and ethylene diamine with water, and a mixture of potassium hydroxide, n-propanol and water.
- These and other preferential etchants for monocrystalline silicon are useable in the process of the present invention for forming fluid nozzles.
- anisotropic etch rate is greatest for (100) oriented silicon, somewhat less for (110) and is least for (111) oriented silicon.
- n-type silicon or p-type silicon with an impurity dopant concentration of less than about l0cm etch rate does not vary significantly, other factors remaining constant.
- p-type dopant concentration l0 cm the p-type silicon would be known as p type silicon to the skilled artisan. From a practical standpoint, in order to ensure an adequate p layer to regulate etch rate, p-type impurity is applied to the saturation point of the surface area of the silicon body.
- FIGS. 1, 2, 3 and 4 illustrate one exemplary sequence of process steps to produce an aperture or hole in a single crystal silicon wafer for forming a fluid nozzle. It is to be appreciated that the following process steps may be used in a different sequence. Also, other film materials for performing the same function below may also be used. Further, film formation, size, thickness and the like may be varied.
- the wafer of single crystal silicon 1 is of oriented silicon, p-type, about 7.5 8.5 mils thick. Front and back surfaces 3 and 5, respectively, are mechanically chemically polished using known techniques. On the front side a first silicon nitride film 7, 500 A. thick is deposited followed by a second layer 9 of silicon dioxide, 4000 A. thick, on top of the silicon nitride.
- the silicon nitride may be omitted if the silicon dioxide is made thicker to act as a mask for acceptor type impurities. Thereafter, the wafer is thermally oxidized, for example, in steam at 1000C., to grow a silicon dioxide film 11, 5000 A. thick, on the back of the wafer. The wafer at this stage is shown by FIG. 1.
- a pattern is defined on the surface of layer 9 to allow removal of silicon dioxide and silicon nitride from surface 3, except in the areas where apertures or holes are required in the final nozzle structure.
- the area of silicon dioxide-silicon nitride layer on the first surface 3 is removed by standard etching techniques except at those areas such as 13 which are masked in accordance with the pattern.
- the wafer at this point in the process is shown by FIG. 2.
- acceptor-type impurities such as boron, gallium, aluminum or the like are introduced into front surface 3 to produce a p* layer.
- This layer is as close to saturation as possible.
- One convenient way to achieve a p* layer is to use a boron tribromide source.
- Drive-in of the dopant impurity is accomplished in known manner by heating in a nitrogen atmosphere at temperatures in excess of 1000C.
- Silicon dioxide is then grown or deposited over the wafer surface.
- FIG. 3 it is seen that a p layer 15 is formed at the surface of the initial silicon wafer 1, and a layer of silicon dioxide 17 is deposited over the unmasked portion of front surface 3, as well as the exposed regions of masking layers 7 and 9.
- a second photolithographic step is now performed on the back or opposite side of the wafer aimed at exposing the silicon surface in areas opposite to and in alignment with area 13.
- An alignment tool capable of front to back alignment is required for this step.
- a three dimensional tunnel is etched through the silicon, by using one of the previously mentioned anisotropic etchants, from the back surface through to the silicon nitride mask 7 since the mask 7 has prevented the formation of a p area corresponding to area 13 thereunder.
- the wafer at this point is illustrated by FIG. 4. Thereafter, the remainder of masking layer 7 and associated layer 17 are removed, such as by use of a suitable etchant.
- Tunnel 21 is shaped in the form of a regular truncated rectangular or square pyramid.
- Typical physical dimensions of a single nozzle fabricated in (100) oriented single crystal silicon wafer 200 micrometers thick are an entrance aperature approximately 325 micrometers on each side of the square tapered to a square membrane 22 approximately 50 micrometers on each side.
- The'thickness of the membrane is variable in the range of 1-1 0 micrometers.
- the size of the hole in the membrane is on the order of 25 micrometers diameter.
- Typical characteristics of the described nozzle in ink jet printing applications are as follows. At fluid pressures up to 80 pounds per square inch the break-off uniformity of an array of nozzles, for example eight nozzles, is less than one-half a wavelength. Velocity uniformity is better than 21%, and the directionality,
- FIG. 7 Another embodiment of this invention, illustrating the principles thereof, is as follows. Initially, a silicon dioxide layer 25 is formed on the back surface of( 100) oriented single crystal silicon wafer 27. Thereafter, a p surface layer 29 is formed to saturation, for example, by a p" diffusion, ion implantation or epitaxial deposition on the front surface of the silicon wafer. The wafer at this point of the process is illustrated by FIG. 7.
- a masking film such as silicon dioxide or silicon nitride is grown or deposited on the p layer. Such a film is shown as 35 on FIG. 8.
- openings are etched in the areas of masking film 25 followed by the etching of tunnels 31 with an anisotropic etchant through to the p" junction to form silicon window panes 33.
- the wafer is now illustrated by FIG. 8.
- openings are etched in the areas of masking film 35 where apertures are to be formed, such as at areas 37, exposing the p layer at these locations, FIG. 9.
- Such openings 37 are required to be aligned relative to areas 33 (FIG. 9) using a front to back alignment tool.
- the p layer is then etched through to form the hole or aperture 39 in the silicon window by using any known technique, such as an isotropic etchant (for example, a mixture of hydrofluoric, nitric and acetic acids), electrolytic etching, ion etching or sputtering in a partial vacuum, laser or electron beam etching, n diffusion or n ion implantation followed by anisotropic etching and the like procedures.
- This etching process is performed after protecting the inner surfaces of tunnel 31, including surface 33.
- a preferred anisotropic etchant composition useable in the above examples is:
- the invention has been illustrated with oriented silicon, single crystal silicon of other orientation may be used, but the three-dimensional geometry of the etched cavity will be different, but equally uniform for a given material.
- the three-dimensional structure may be controlled in numerous ways, such as taper shape, shape of inner window and outer orifices, use of a plurality of tunnels leading to a single orifice, etc.
- a plurality of apertures may be formed in square or rectangular windows.
- L shaped, U shaped and square frame shaped windows may be used.
- mesa structures of different heights may be fabricated, each mesa being characterized by its own orifice or array of orifices.
- semiconductor materials exhibiting the same crystallographic properties and selective etching properties may be used.
- Such other semiconductor materials include germanium and compound semiconductors such as those from group III and V elements of theperiodic table of elements, for example, gallium arsenide.
- one use of this invention is to produce a nozzle plate of precisely calibrated orifices to control gas and liquid flow, particularly for ink jet printing.
- a nozzle comprising:
- a nozzle body formed of a semiconductor material having a rectangular entrance aperture of a first cross-sectional area which tapers to a second crosssectional area which is smaller than the cross-sectional area of said entrance aperture;
- a membrane of said semiconductor material formed within said second cross-sectional area and having an exit aperture formed therein having a smaller cross-sectional area than said second cross-sectional area and having a different cross-sectional geometry than said second cross-sectional area.
Abstract
Method for producing a predetermined pattern of small size fluid nozzles of identical or different geometries in crystallographically oriented monocrystalline silicon or similar material utilizing anisotropic etching through the silicon to an integral etch resistant barrier layer heavily doped with P type impurities.
Description
United States Patent [191 Bassous l l NOZZLES FORMED IN MONOCRYSTALLINE SILICON [75] Inventor: Ernest Bassous, New York City,
[73] Assignee: International Business Machines Corporation, Armonk, N.Y.
[22] Filed: Dec. 31, 1974 [21] Applv No.: 537,799
[52] US. Cl. 239/601; 239/102; 239/602; 239/DlG. 19; 346/75 [51] Int. Cl. ..B05B1/08;GO1D 15/18 [58] Field of Search 239/4, 102,602, 601. 239/DIG. l9;346/1, 75, 140
[56] References Cited UNITED STATES PATENTS 2,665,946 l/l954 Broughton 239/601 X 2,834,635 5/l958 Miller 239/602 X 1 Nov. 25, 1975 2,987,262 6/1961 Goyette et al. 239/596 X 3,125,295 3/l964 MOSS et ul 239/4 X 3,211,088 10/1965 Naiman..... 239/]02 X 3,655,530 4/1972 Tayl0r.... 346/75 X 3,657,599 4/l972 Kashio 346/75 X OTHER PUBLICATIONS IBM Technical Disclosure Bulletin, Vol. 17, No. 3, Aug. 1974, High-Tolerance Control...Nozzles, L. Kuhn et al., 2 pages (pp. 928 and 929).
Primary E.raminerRobert S. Ward, Jr. Attorney, Agent, or FirmJack M. Arnold [57] ABSTRACT Method for producing a predetermined pattern of small size fluid nozzles of identical or different geometries in crystallographically oriented monocrystalline silicon or similar material utilizing anisotropic etching through the silicon to an integral etch resistant barrier layer heavily doped with P type impurities.
4 Claims, 9 Drawing Figures NOZZLES FORMED IN MONOCRYSTALLINE SILICON BACKGROUND OF THE INVENTION The following literature references and patents disclose the employment of anisotropic or preferential etchants with semiconductor materials:
U.S. Pat. No. 3,725,160 to Bean et al.; U.S. Pat. No. 2,770,533 to W. K. Zwicker; U.S. Pat. No. 3,746,587 to Rosvold; U.S. Pat. No. 3,742,317 to Shao; Great Britain Pat. No. 869,669; J. Electrochemical Society, 114, 965 (1967) by Finne and Kline; .I. Electrochemical Society, 118, 401 (1971) by Bohg; J. Electrochemical Society, 111, Abstract 89, 202 (1962) by Crishal and Harrington; J. Electrochemical Society, 1 16, 1325 (1969) by Greenwood; J. Applied Physics, 40, 4569 (1969) by Lee; RCA Review, p. 271 (June 1970) by Stoller; .l. Electrochemical Society, 119, 1769 (1972) by Sedgwick, Broers and Agule, as well as others.
In the prior art, single fluid nozzles or arrays of fluid nozzles, which for example may be used in ink jet printers, were generally made of tubes which are single structures. These nozzles were formed by drilling holes in plates by mechanical or electromechanical means, by the use of an electron beam or a laser or the like. These plates are formed for example of stainless steel, glass or quartz, vitreous carbon, jewels such as sapphire and the like. The techniques set forth above suffer from at least some of the following disadvantages, namely (1) generally a single nozzle is formed, (2) the control of the individual size of nozzles is relatively poor, (3) fabrication of arrays of such nozzles is even more difficult, with attendant nonuniformity of size of holes and spatial distribution of the array. In ink jet printing applications, a jet of ink is forced through a vibrating nozzle causing the jet of ink to break up into droplets of equal size. Printing is effected by controlling the flight of the droplets to a target such as paper. Important characteristics for ink jet printing applications are, the
size of respective nozzles, spatial distribution of the nozzles in an array, and the means for vibrating the respective nozzles. Such factors affect velocity uniformity of fluid emitted from the respective nozzles, directionality of the respective droplets, and break off distance of the individual droplets, that is the distance between the exit of the nozzle and the position of the first droplet.
According to the present invention individual nozzles or an array of such nozzles may be batch fabricated easily due to the crystallographic perfection of the starting material, namely the semiconductor used, which for example may be silicon and the selectivity of the etchant. There is a high degree of control of nozzle size resulting from precise control of processes used in fabrication, namely the formation of diffused layers with required dopant concentrations; control of etch rates of semiconductor material as a function of its crystallographic orientation and of its conductivity type and dopant concentration. In addition, the etch rate of anisotropic etching solutions is controlled as a function of their composition and temperature and the process environmental characteristics. In the fabrication of arrays, the same degree of control is obtainable as for a single nozzle, as is the control of spatial distribution and uniformity of hole size due to high control of the photolithographic process.
The orifice like properties of the instant nozzles are better than those of pipes because wall effects are minimized. Since the nozzle, according to the present invention, is tapered from the entrance orifice to the exit orifice, the wall effects are substantially reduced.
Another advantage of the nozzle of the present invention is that inspection of a given nozzle may be done visually and such inspection is sufficient to anticipate the performance of the individual nozzle. That is, the nozzle is inspected for orifice size and integrity of the structure, without having to actually check the performance of the nozzle in an ink jet printer.
The nozzle of the present invention may pass fluid in either direction, but in the preferred mode of operation fluid flow is in the direction of the larger opening to the smaller opening of the nozzle since there is less pressure drop.
The present invention employs anisotropic etching of monocrystalline silicon, crystallographically oriented, in order to produce one or a plurality, i.e., an array, of identically or unidentically shaped nozzles or holes in a thin monocrystalline semiconductor wafer. The holes are generally of 25 micrometers or less in diameter at the surface of the wafer and are positioned in a background window or membrane due to the anisotropic etching effect on the underlying crystallographically oriented monocrystalline silicon. Depending upon masking technique and selection of plane of the crystallographically oriented material, geometrical design of the hole may be varied in a predetermined manner, i.e., triangles, rectangles or squares may be produced in place of circular holes.
By practice of this invention one is able to produce a pattern of identical holes of small size in a semiconductor wafer. The wafer may then be employed as a nozzle in process and/or apparatus designs requiring the feeding of fluid through holes of 25 micrometers or less in diameter, such as in magnetic and electrostatic ink jet processes, and other gas or liquid metering and filtering systems requiring calibrated single or multiple orifices. Further, the wafer produced by the process of this invention is characterized by a pattern of a plurality of orifices which may also be employed as a substrate for wiring and packaging integrated circuits and other solid state components, or a filter or guide for electromagnetic radiation.
SUMMARY OF THE INVENTION It is an object of this invention to provide a process for producing a single nozzle or an array of fluid nozzles in a semiconductor wafer.
Another object of this invention is to provide a process for producing a single hole or a plurality of holes of predetermined shape and size in a semiconductor wafer of crystallographically oriented monocrystalline silicon for forming nozzles.
A further object of this invention is to provide a process for producing holes of diminishing cross-section, from one side to the other, through a thin semiconductor wafer for forming nozzles.
The above, as well as other objects which will be apparent to the skilled artisan are provided by a process for producing nozzle(s) comprising one of a plurality of apertures in a thin crystallographically oriented non-p monocrystalline silicon material comprising forming an aperture mask on one surface of the silicon material, forming a p surface layer on the non-masked areas of said one surface, anisotropically etching a tunnel from 3 the opposite surface of said silicon material through to the masked area of said one surface and removing the mask. Alternatively, a p layer is formed on a surface, a tunnel is anisotropically etched from another surface to said p layer and the area of the p layer over said tunnel corresponding to the aperture is removed.
In preferred embodiments of this invention the p layer is formed by diffusion of ion implantation into or epitaxial growth on the surface of the monocrystalline silicon body. Preferred plane orientations for the monocrystalline silicon are to provide preferential etching along the (100), (1 l) and (l 1 l) oriented silicon planes.
In order to ensure the effective termination of etching at the p layer, the p barrier layer is defined as containing a p-type dopant atom concentration l0 cm preferably a concentration 3 7 X lO cm DESCRIPTION OF THE DRAWING FIGS. 1-4 represent sequential cross-sectional views of a silicon wafer processed in accordance with this invention;
FIGS. 5 and 6 illustrate front and cross-sectional views of a nozzle produced in accordance with the sequence illustrated by FIGS. 1-4.
FIGS. 79 represent sequential cross-sectional views of a silicon wafer processed by another example of the process of this invention.
DETAILED DESCRIPTION OF THE INVENTION For a variety of uses it is desirable to provide one or more precise, reproducible apertures in or through a monocrystalline silicon wafer. The present invention is a process for chemically drilling a hole through monocrystalline silicon using an anisotropic etchant for forming a fluid nozzle or an array of such fluid nozzles.
Anistropic or preferential etchants attack solid materials in different directions at different rates. Numerous anisotropic etchants are known for monocrystalline silicon which include alkaline liquids or mixtures thereof. As common single crystal silicon anisotropic etchants there may be mentioned aqueous sodium hydroxide, aqueous potassium hydroxide, aqueous hydrazine, tetramethyl ammonium hydroxide, mixtures of phenols and amines such as a mixture of pyrocatechol and ethylene diamine with water, and a mixture of potassium hydroxide, n-propanol and water. These and other preferential etchants for monocrystalline silicon are useable in the process of the present invention for forming fluid nozzles.
Although it is known that the rate of preferential etching varies with respect to chemical constituents of the etchant, types of silicon and specific impurities therein, temperature and concentration of etchant, particular crystallographic orientation of the single crystal silicon and other factors, it is known that etching virtually ceases at a p barrier layer. Thus by forming a p yp -P yp P" yp f r p n yr -1 yp type-p type, or n type-p type junction in monocrystalline silicon, etching action of the anisotropic reagent is effectively retarded or completely stopped at the junction.
With respect to the three most common low index crystal planes in single crystal silicon, anisotropic etch rate is greatest for (100) oriented silicon, somewhat less for (110) and is least for (111) oriented silicon. Further with n-type silicon or p-type silicon with an impurity dopant concentration of less than about l0cm etch rate does not vary significantly, other factors remaining constant. However, with p-type dopant concentration l0 cm the p-type silicon would be known as p type silicon to the skilled artisan. From a practical standpoint, in order to ensure an adequate p layer to regulate etch rate, p-type impurity is applied to the saturation point of the surface area of the silicon body.
FIGS. 1, 2, 3 and 4 illustrate one exemplary sequence of process steps to produce an aperture or hole in a single crystal silicon wafer for forming a fluid nozzle. It is to be appreciated that the following process steps may be used in a different sequence. Also, other film materials for performing the same function below may also be used. Further, film formation, size, thickness and the like may be varied. The wafer of single crystal silicon 1 is of oriented silicon, p-type, about 7.5 8.5 mils thick. Front and back surfaces 3 and 5, respectively, are mechanically chemically polished using known techniques. On the front side a first silicon nitride film 7, 500 A. thick is deposited followed by a second layer 9 of silicon dioxide, 4000 A. thick, on top of the silicon nitride. The silicon nitride may be omitted if the silicon dioxide is made thicker to act as a mask for acceptor type impurities. Thereafter, the wafer is thermally oxidized, for example, in steam at 1000C., to grow a silicon dioxide film 11, 5000 A. thick, on the back of the wafer. The wafer at this stage is shown by FIG. 1.
Next, by a photolithographic process, a pattern is defined on the surface of layer 9 to allow removal of silicon dioxide and silicon nitride from surface 3, except in the areas where apertures or holes are required in the final nozzle structure. In accordance with the pattern, the area of silicon dioxide-silicon nitride layer on the first surface 3 is removed by standard etching techniques except at those areas such as 13 which are masked in accordance with the pattern. The wafer at this point in the process is shown by FIG. 2.
Thereafter, acceptor-type impurities such as boron, gallium, aluminum or the like are introduced into front surface 3 to produce a p* layer. This layer is as close to saturation as possible. One convenient way to achieve a p* layer is to use a boron tribromide source. Drive-in of the dopant impurity is accomplished in known manner by heating in a nitrogen atmosphere at temperatures in excess of 1000C. Silicon dioxide is then grown or deposited over the wafer surface. In FIG. 3, it is seen that a p layer 15 is formed at the surface of the initial silicon wafer 1, and a layer of silicon dioxide 17 is deposited over the unmasked portion of front surface 3, as well as the exposed regions of masking layers 7 and 9.
A second photolithographic step is now performed on the back or opposite side of the wafer aimed at exposing the silicon surface in areas opposite to and in alignment with area 13. An alignment tool capable of front to back alignment is required for this step. Then a three dimensional tunnel is etched through the silicon, by using one of the previously mentioned anisotropic etchants, from the back surface through to the silicon nitride mask 7 since the mask 7 has prevented the formation of a p area corresponding to area 13 thereunder. The wafer at this point is illustrated by FIG. 4. Thereafter, the remainder of masking layer 7 and associated layer 17 are removed, such as by use of a suitable etchant. Assuming that the alignment pattern was selected to provide a circular silicon nitride mask prior to formation of the p surface layer, the result is a circular hole 20 centrally positioned within a square silicon windowpane 22 within (100) oriented silicon. This result is illustrated in front view by FIG. 5 and in cross-section by FIG. 6. Tunnel 21 is shaped in the form of a regular truncated rectangular or square pyramid.
Typical physical dimensions of a single nozzle fabricated in (100) oriented single crystal silicon wafer 200 micrometers thick are an entrance aperature approximately 325 micrometers on each side of the square tapered to a square membrane 22 approximately 50 micrometers on each side. The'thickness of the membrane is variable in the range of 1-1 0 micrometers. The size of the hole in the membrane is on the order of 25 micrometers diameter.
Typical characteristics of the described nozzle in ink jet printing applications are as follows. At fluid pressures up to 80 pounds per square inch the break-off uniformity of an array of nozzles, for example eight nozzles, is less than one-half a wavelength. Velocity uniformity is better than 21%, and the directionality,
that is the directional alignment of the respective fluid jets, is within :1 milliradian of parallel alignment. The efficiency of this tapered nozzle is superior to tubular nozzles as distinguished by the minimal drop in fluid pressure from the entrance orifice to the exit orifice.
Another embodiment of this invention, illustrating the principles thereof, is as follows. Initially, a silicon dioxide layer 25 is formed on the back surface of( 100) oriented single crystal silicon wafer 27. Thereafter, a p surface layer 29 is formed to saturation, for example, by a p" diffusion, ion implantation or epitaxial deposition on the front surface of the silicon wafer. The wafer at this point of the process is illustrated by FIG. 7.
Subsequent to the formation of the p layer a masking film such as silicon dioxide or silicon nitride is grown or deposited on the p layer. Such a film is shown as 35 on FIG. 8.
Thereafter, openings are etched in the areas of masking film 25 followed by the etching of tunnels 31 with an anisotropic etchant through to the p" junction to form silicon window panes 33. The wafer is now illustrated by FIG. 8. Thereafter, openings are etched in the areas of masking film 35 where apertures are to be formed, such as at areas 37, exposing the p layer at these locations, FIG. 9. Such openings 37 are required to be aligned relative to areas 33 (FIG. 9) using a front to back alignment tool.
To complete the process, the p layer is then etched through to form the hole or aperture 39 in the silicon window by using any known technique, such as an isotropic etchant (for example, a mixture of hydrofluoric, nitric and acetic acids), electrolytic etching, ion etching or sputtering in a partial vacuum, laser or electron beam etching, n diffusion or n ion implantation followed by anisotropic etching and the like procedures. This etching process is performed after protecting the inner surfaces of tunnel 31, including surface 33.
A preferred anisotropic etchant composition useable in the above examples is:
Pyrocatcchol 4 grams Ethylene diaminc 25 ml Water 8 ml at l 18 i 1C.
Although the invention has been illustrated with oriented silicon, single crystal silicon of other orientation may be used, but the three-dimensional geometry of the etched cavity will be different, but equally uniform for a given material. Where desired, the three-dimensional structure may be controlled in numerous ways, such as taper shape, shape of inner window and outer orifices, use of a plurality of tunnels leading to a single orifice, etc. A plurality of apertures may be formed in square or rectangular windows. In the case of silicon, L shaped, U shaped and square frame shaped windows may be used. Further, mesa structures of different heights may be fabricated, each mesa being characterized by its own orifice or array of orifices. Also other semiconductor materials exhibiting the same crystallographic properties and selective etching properties may be used. Such other semiconductor materials include germanium and compound semiconductors such as those from group III and V elements of theperiodic table of elements, for example, gallium arsenide. As noted above, one use of this invention is to produce a nozzle plate of precisely calibrated orifices to control gas and liquid flow, particularly for ink jet printing.
Although the invention has been illustrated in detail with the employment of silicon nitride and silicon dioxide masking layers, other equivalent layers such as aluminum oxide, are applicable. Phosphoric acid is often used to dissolve silicon nitride while dilute and buffered hydrofluoric acid dissolves the above oxide masking layers. Other isotropic etchants for p silicon if the embodiment of FIGS. 7-9 is employed, are mixtures of oxidizing agents such as hydrogen perioxide, nitric acid, or potassium permanganate and hydrofluoric acid.
Variation of the invention will be apparent to the skilled artisan.
What is claimed is:
1. A nozzle comprising:
a nozzle body formed of a semiconductor material having a rectangular entrance aperture of a first cross-sectional area which tapers to a second crosssectional area which is smaller than the cross-sectional area of said entrance aperture; and
a membrane of said semiconductor material formed within said second cross-sectional area and having an exit aperture formed therein having a smaller cross-sectional area than said second cross-sectional area and having a different cross-sectional geometry than said second cross-sectional area.
2. The combination claimed in claim 1 wherein said semiconductor material is monocrystalline silicon.
3. The combination claimed in claim 2 wherein said exit aperture is substantially circular in cross-section.
4. The combination claimed in claim 3 wherein said entrance aperture and said second cross-sectional area are substantially square in cross-section.
Claims (4)
1. A NOZZLE COMPRISING A NOZZLE BODY FORMED OF A SEMICONDUCTOR MATERIAL HAVING A RECTANGULAR ENTRANCE APERTURE OF A FIRST CROSS-SECTIONAL AREA WHICH TAPERS TO A SECOND CROSS-SECTIONAL AREA WHICH IS SMALLER THAN THE CROSS-SECTIONAL AREA OF SAID ENTRANCE APERATURE; AND A MEMBRANE OF SAID SEMICONDUCTOR MATERIAL FORMED WITHIN SAID SECOND CROSS-SECTIONAL AREA AND HAVING AN EXIT APERTURE FORMED THEREIN HAVING A SMALLER CROSS-SECTIONAL AREA THAN SAID SECOND CROSS-SECTIONAL AREA AND HAVING A DIFFERENT CROSS-SECTIONAL GERMETRY THAN SAID SECOND CROSS-SECTIONAL AREA.
2. The combination claimed in claim 1 wherein said semiconductor material is monocrystalline silicon.
3. The combination claimed in claim 2 wherein said exit aperture is substantially circular in cross-section.
4. The combination claimed in claim 3 wherein said entrance aperture and said second cross-sectional area are substantially square in cross-section.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US537799A US3921916A (en) | 1974-12-31 | 1974-12-31 | Nozzles formed in monocrystalline silicon |
JP12333875A JPS5516070B2 (en) | 1974-12-31 | 1975-10-15 | |
GB43997/75A GB1492465A (en) | 1974-12-31 | 1975-10-27 | Nozzles and method of producing nozzles |
IT28866/75A IT1054354B (en) | 1974-12-31 | 1975-10-31 | PROCEDURE FOR FORMING ONE OR MORE NOZZLES IN A MONOCRYSTALLINE SILICON WAFER |
CA240,350A CA1037519A (en) | 1974-12-31 | 1975-11-21 | Method of producing nozzles in monocrystalline silicon wafer |
FR7536645A FR2296504A1 (en) | 1974-12-31 | 1975-11-21 | PROCESS FOR MANUFACTURING NOZZLES IN A SILICON SLICE AND CORRESPONDING NOZZLE, IN PARTICULAR FOR AN INKJET PRINTER |
DE2555462A DE2555462C2 (en) | 1974-12-31 | 1975-12-10 | Process for the manufacture of nozzles for ink jet printers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US537799A US3921916A (en) | 1974-12-31 | 1974-12-31 | Nozzles formed in monocrystalline silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
US3921916A true US3921916A (en) | 1975-11-25 |
Family
ID=24144139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US537799A Expired - Lifetime US3921916A (en) | 1974-12-31 | 1974-12-31 | Nozzles formed in monocrystalline silicon |
Country Status (7)
Country | Link |
---|---|
US (1) | US3921916A (en) |
JP (1) | JPS5516070B2 (en) |
CA (1) | CA1037519A (en) |
DE (1) | DE2555462C2 (en) |
FR (1) | FR2296504A1 (en) |
GB (1) | GB1492465A (en) |
IT (1) | IT1054354B (en) |
Cited By (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4007464A (en) * | 1975-01-23 | 1977-02-08 | International Business Machines Corporation | Ink jet nozzle |
US4014029A (en) * | 1975-12-31 | 1977-03-22 | International Business Machines Corporation | Staggered nozzle array |
US4035812A (en) * | 1976-07-12 | 1977-07-12 | The Mead Corporation | Ink jet recorder and charge ring plate therefor with reduced deplating current |
US4047184A (en) * | 1976-01-28 | 1977-09-06 | International Business Machines Corporation | Charge electrode array and combination for ink jet printing and method of manufacture |
US4106976A (en) * | 1976-03-08 | 1978-08-15 | International Business Machines Corporation | Ink jet nozzle method of manufacture |
US4146899A (en) * | 1977-10-13 | 1979-03-27 | The Mead Corporation | Formed orifice plate for ink jet printing apparatus |
US4169008A (en) * | 1977-06-13 | 1979-09-25 | International Business Machines Corporation | Process for producing uniform nozzle orifices in silicon wafers |
US4184925A (en) * | 1977-12-19 | 1980-01-22 | The Mead Corporation | Solid metal orifice plate for a jet drop recorder |
US4229265A (en) * | 1979-08-09 | 1980-10-21 | The Mead Corporation | Method for fabricating and the solid metal orifice plate for a jet drop recorder produced thereby |
US4239586A (en) * | 1979-06-29 | 1980-12-16 | International Business Machines Corporation | Etching of multiple holes of uniform size |
US4282533A (en) * | 1980-02-22 | 1981-08-04 | Celanese Corporation | Precision orifice nozzle devices for ink jet printing apparati and the process for their manufacture |
US4357614A (en) * | 1980-10-07 | 1982-11-02 | Fuji Xerox Co., Ltd. | Ink particle jetting device for multi-nozzle ink jet printer |
EP0067948A1 (en) * | 1981-06-18 | 1982-12-29 | International Business Machines Corporation | Method and apparatus for producing liquid drops on demand |
US4430784A (en) * | 1980-02-22 | 1984-02-14 | Celanese Corporation | Manufacturing process for orifice nozzle devices for ink jet printing apparati |
US4455192A (en) * | 1981-05-07 | 1984-06-19 | Fuji Xerox Company, Ltd. | Formation of a multi-nozzle ink jet |
US4522893A (en) * | 1981-10-30 | 1985-06-11 | International Business Machines Corporation | Contact device for releasably connecting electrical components |
US4555062A (en) * | 1983-04-05 | 1985-11-26 | Hewlett-Packard Company | Anti-wetting in fluid nozzles |
EP0177316A2 (en) * | 1984-09-28 | 1986-04-09 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating an ink jet printer nozzle member |
US4583690A (en) * | 1983-04-05 | 1986-04-22 | Hewlett-Packard Company | Anti-wetting in fluid nozzles |
EP0178596A2 (en) * | 1984-10-15 | 1986-04-23 | AT & T Teletype Corporation | Silicon nozzle structures and method of manufacture |
US4628576A (en) * | 1985-02-21 | 1986-12-16 | Ford Motor Company | Method for fabricating a silicon valve |
US4647013A (en) * | 1985-02-21 | 1987-03-03 | Ford Motor Company | Silicon valve |
US4733823A (en) * | 1984-10-15 | 1988-03-29 | At&T Teletype Corporation | Silicon nozzle structures and method of manufacture |
US4756508A (en) * | 1985-02-21 | 1988-07-12 | Ford Motor Company | Silicon valve |
US4768751A (en) * | 1987-10-19 | 1988-09-06 | Ford Motor Company | Silicon micromachined non-elastic flow valves |
WO1989008787A1 (en) * | 1988-03-14 | 1989-09-21 | Baxter International Inc. | Systems having fixed and variable flow rate control mechanisms |
US5009251A (en) * | 1988-11-15 | 1991-04-23 | Baxter International, Inc. | Fluid flow control |
US5014750A (en) * | 1988-03-14 | 1991-05-14 | Baxter International Inc. | Systems having fixed and variable flow rate control mechanisms |
US5176360A (en) * | 1988-03-14 | 1993-01-05 | Baxter International Inc. | Infusor having fixed and variable flow rate control mechanisms |
US5244154A (en) * | 1991-02-09 | 1993-09-14 | Robert Bosch Gmbh | Perforated plate and fuel injection valve having a performated plate |
US5402937A (en) * | 1990-09-21 | 1995-04-04 | Robert Bosch Gmbh | Perforated body and valve with perforated body |
US5402943A (en) * | 1990-12-04 | 1995-04-04 | Dmw (Technology) Limited | Method of atomizing including inducing a secondary flow |
US5472143A (en) * | 1992-09-29 | 1995-12-05 | Boehringer Ingelheim International Gmbh | Atomising nozzle and filter and spray generation device |
US5492277A (en) * | 1993-02-17 | 1996-02-20 | Nippondenso Co., Ltd. | Fluid injection nozzle |
US5497944A (en) * | 1990-03-21 | 1996-03-12 | Dmw (Technology) Limited | Atomising devices and methods |
US5569187A (en) * | 1994-08-16 | 1996-10-29 | Texas Instruments Incorporated | Method and apparatus for wireless chemical supplying |
WO1996034639A1 (en) * | 1995-05-03 | 1996-11-07 | Tricumed Gmbh | Implantable diffusion pump |
FR2736303A1 (en) * | 1995-07-03 | 1997-01-10 | Seiko Epson Corp | INK JET HEAD AND METHOD FOR MANUFACTURING THE SAME |
DE19626822A1 (en) * | 1995-07-03 | 1997-01-30 | Seiko Epson Corp | Inkjet head and its manufacturing process |
US5649359A (en) * | 1992-08-31 | 1997-07-22 | Canon Kabushiki Kaisha | Ink jet head manufacturing method using ion machining and ink jet head manufactured thereby |
WO1997028000A1 (en) * | 1996-02-01 | 1997-08-07 | Spectra, Inc. | High resolution matrix ink jet arrangement |
US5658471A (en) * | 1995-09-22 | 1997-08-19 | Lexmark International, Inc. | Fabrication of thermal ink-jet feed slots in a silicon substrate |
US5901425A (en) * | 1996-08-27 | 1999-05-11 | Topaz Technologies Inc. | Inkjet print head apparatus |
US5908414A (en) * | 1995-05-03 | 1999-06-01 | Tricumed Gmbh | Implantable infusion pump |
US5989445A (en) * | 1995-06-09 | 1999-11-23 | The Regents Of The University Of Michigan | Microchannel system for fluid delivery |
US6007676A (en) * | 1992-09-29 | 1999-12-28 | Boehringer Ingelheim International Gmbh | Atomizing nozzle and filter and spray generating device |
EP0975465A1 (en) * | 1997-04-18 | 2000-02-02 | Topaz Technologies, Inc. | Nozzle plate for an ink jet print head |
US6189813B1 (en) | 1996-07-08 | 2001-02-20 | Corning Incorporated | Rayleigh-breakup atomizing devices and methods of making rayleigh-breakup atomizing devices |
US6189214B1 (en) | 1996-07-08 | 2001-02-20 | Corning Incorporated | Gas-assisted atomizing devices and methods of making gas-assisted atomizing devices |
US6352209B1 (en) | 1996-07-08 | 2002-03-05 | Corning Incorporated | Gas assisted atomizing devices and methods of making gas-assisted atomizing devices |
US6363606B1 (en) * | 1998-10-16 | 2002-04-02 | Agere Systems Guardian Corp. | Process for forming integrated structures using three dimensional printing techniques |
US6423476B1 (en) * | 1999-12-22 | 2002-07-23 | Samsung Electronics Co., Ltd. | Method of manufacturing a nozzle plate |
US20020172619A1 (en) * | 1998-09-17 | 2002-11-21 | Moon James E. | Integrated monolithic microfabricated electrospray and liquid chromatography system and method |
US6568791B2 (en) * | 1997-07-04 | 2003-05-27 | Canon Kabushiki Kaisha | Ink jet recording head and a method of manufacture therefor |
US6596988B2 (en) | 2000-01-18 | 2003-07-22 | Advion Biosciences, Inc. | Separation media, multiple electrospray nozzle system and method |
US20030167796A1 (en) * | 1997-12-19 | 2003-09-11 | Hawtof Daniel W. | Burner and method for producing metal oxide soot |
US6627882B2 (en) | 1999-12-30 | 2003-09-30 | Advion Biosciences, Inc. | Multiple electrospray device, systems and methods |
US6633031B1 (en) | 1999-03-02 | 2003-10-14 | Advion Biosciences, Inc. | Integrated monolithic microfabricated dispensing nozzle and liquid chromatography-electrospray system and method |
US6663231B2 (en) | 2000-02-24 | 2003-12-16 | Samsung Electronics Co., Ltd. | Monolithic nozzle assembly formed with mono-crystalline silicon wafer and method for manufacturing the same |
US20040063245A1 (en) * | 2001-01-16 | 2004-04-01 | Infineon Technologies Ag | Method of fabricating an electronic component |
US20040159319A1 (en) * | 1997-09-26 | 2004-08-19 | Boehringer Ingelheim International Gmbh | Microstructured filter |
US20050003317A1 (en) * | 2001-12-04 | 2005-01-06 | Toru Mizuno | Quartz glass single hole nozzle and quartz glass multi-hole burner head for feeding fluid |
US6863375B2 (en) * | 1997-05-14 | 2005-03-08 | Seiko Epson Corporation | Ejection device and inkjet head with silicon nozzle plate |
US20050116069A1 (en) * | 2002-02-21 | 2005-06-02 | Kazuhiro Murata | Ultrafine fluid jet apparatus |
US20060028508A1 (en) * | 2004-08-05 | 2006-02-09 | Zhenfang Chen | Print head nozzle formation |
EP1665353A1 (en) * | 2003-09-09 | 2006-06-07 | CSG Solar, AG | Improved method of etching silicon |
US20070007627A1 (en) * | 2003-09-09 | 2007-01-11 | Csg Solar Ag | Method of forming openings in an organic resin material |
US20070123765A1 (en) * | 2005-10-07 | 2007-05-31 | Hetke Jamille F | Modular multichannel microelectrode array and methods of making same |
US20080100667A1 (en) * | 2006-10-25 | 2008-05-01 | Kabushiki Kaisha Toshiba | Nozzle plate, method for producing nozzle plate, droplet dispensing head, method for producing droplet dispensing head, and droplet dispensing device |
US20080166832A1 (en) * | 2003-09-09 | 2008-07-10 | Csg Solar Ag | Adjustments of Masks by Re-Flow |
US20080208283A1 (en) * | 2007-02-26 | 2008-08-28 | Rio Vetter | Neural Interface System |
US20090118806A1 (en) * | 2007-10-17 | 2009-05-07 | Vetter Rio J | Three-dimensional system of electrode leads |
US20090132042A1 (en) * | 2007-10-17 | 2009-05-21 | Hetke Jamille F | Implantable device including a resorbable carrier |
US20090187196A1 (en) * | 2007-10-17 | 2009-07-23 | Vetter Rio J | Guide tube for an implantable device system |
US20090234426A1 (en) * | 2008-02-29 | 2009-09-17 | Pellinen David S | Implantable electrode and method of making the same |
US20090240314A1 (en) * | 2008-03-24 | 2009-09-24 | Kong K C | Implantable electrode lead system with a three dimensional arrangement and method of making the same |
US20090253977A1 (en) * | 2003-10-21 | 2009-10-08 | Kipke Daryl R | Intracranial neural interface system |
US20090299167A1 (en) * | 2006-01-26 | 2009-12-03 | Seymour John P | Microelectrode with laterally extending platform for reduction of tissue encapsulation |
US20100141709A1 (en) * | 2008-10-31 | 2010-06-10 | Gregory Debrabander | Shaping a Nozzle Outlet |
US20100165048A1 (en) * | 2008-12-30 | 2010-07-01 | Gregory Debrabander | Forming nozzles |
US20100276505A1 (en) * | 2007-09-26 | 2010-11-04 | Roger Earl Smith | Drilling in stretched substrates |
US20110093052A1 (en) * | 2009-10-16 | 2011-04-21 | Anderson David J | Neural interface system |
US20110112591A1 (en) * | 2009-11-05 | 2011-05-12 | Seymour John P | Waveguide neural interface device |
US9014796B2 (en) | 2005-06-14 | 2015-04-21 | Regents Of The University Of Michigan | Flexible polymer microelectrode with fluid delivery capability and methods for making same |
US9155861B2 (en) | 2010-09-20 | 2015-10-13 | Neuronexus Technologies, Inc. | Neural drug delivery system with fluidic threads |
US9289142B2 (en) | 2008-03-24 | 2016-03-22 | Neuronexus Technologies, Inc. | Implantable electrode lead system with a three dimensional arrangement and method of making the same |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0149330B1 (en) * | 1983-12-08 | 1989-04-26 | General Signal Corporation | Isfet sensor and method of manufacture |
JP6901446B2 (en) | 2018-09-03 | 2021-07-14 | 株式会社東芝 | Wireless communication devices, wireless communication systems, wireless communication methods and programs |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2665946A (en) * | 1951-05-29 | 1954-01-12 | Arthur E Broughton | Spray nozzle |
US2834635A (en) * | 1955-06-22 | 1958-05-13 | Muellermist Irrigation Co | Liquid spray device |
US2987262A (en) * | 1959-11-24 | 1961-06-06 | Lodding Engineering Corp | Removable and replaceable shower device |
US3125295A (en) * | 1960-12-30 | 1964-03-17 | Crystal | |
US3211088A (en) * | 1962-05-04 | 1965-10-12 | Sperry Rand Corp | Exponential horn printer |
US3655530A (en) * | 1970-06-15 | 1972-04-11 | Mead Corp | Fabrication of orifices |
US3657599A (en) * | 1970-03-18 | 1972-04-18 | Casio Computer Co Ltd | Ink accelerating unit for use in ink jet printer |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3742230A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask support substrate |
-
1974
- 1974-12-31 US US537799A patent/US3921916A/en not_active Expired - Lifetime
-
1975
- 1975-10-15 JP JP12333875A patent/JPS5516070B2/ja not_active Expired
- 1975-10-27 GB GB43997/75A patent/GB1492465A/en not_active Expired
- 1975-10-31 IT IT28866/75A patent/IT1054354B/en active
- 1975-11-21 CA CA240,350A patent/CA1037519A/en not_active Expired
- 1975-11-21 FR FR7536645A patent/FR2296504A1/en active Granted
- 1975-12-10 DE DE2555462A patent/DE2555462C2/en not_active Expired
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2665946A (en) * | 1951-05-29 | 1954-01-12 | Arthur E Broughton | Spray nozzle |
US2834635A (en) * | 1955-06-22 | 1958-05-13 | Muellermist Irrigation Co | Liquid spray device |
US2987262A (en) * | 1959-11-24 | 1961-06-06 | Lodding Engineering Corp | Removable and replaceable shower device |
US3125295A (en) * | 1960-12-30 | 1964-03-17 | Crystal | |
US3211088A (en) * | 1962-05-04 | 1965-10-12 | Sperry Rand Corp | Exponential horn printer |
US3657599A (en) * | 1970-03-18 | 1972-04-18 | Casio Computer Co Ltd | Ink accelerating unit for use in ink jet printer |
US3655530A (en) * | 1970-06-15 | 1972-04-11 | Mead Corp | Fabrication of orifices |
Cited By (158)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4007464A (en) * | 1975-01-23 | 1977-02-08 | International Business Machines Corporation | Ink jet nozzle |
US4014029A (en) * | 1975-12-31 | 1977-03-22 | International Business Machines Corporation | Staggered nozzle array |
DE2648867A1 (en) * | 1975-12-31 | 1977-07-14 | Ibm | METHOD OF OPERATING AN INKJET PRINTER AND A SUITABLE NOZZLE ARRANGEMENT FOR INKJET PRINTER |
US4047184A (en) * | 1976-01-28 | 1977-09-06 | International Business Machines Corporation | Charge electrode array and combination for ink jet printing and method of manufacture |
US4106976A (en) * | 1976-03-08 | 1978-08-15 | International Business Machines Corporation | Ink jet nozzle method of manufacture |
US4035812A (en) * | 1976-07-12 | 1977-07-12 | The Mead Corporation | Ink jet recorder and charge ring plate therefor with reduced deplating current |
US4169008A (en) * | 1977-06-13 | 1979-09-25 | International Business Machines Corporation | Process for producing uniform nozzle orifices in silicon wafers |
US4146899A (en) * | 1977-10-13 | 1979-03-27 | The Mead Corporation | Formed orifice plate for ink jet printing apparatus |
US4184925A (en) * | 1977-12-19 | 1980-01-22 | The Mead Corporation | Solid metal orifice plate for a jet drop recorder |
US4239586A (en) * | 1979-06-29 | 1980-12-16 | International Business Machines Corporation | Etching of multiple holes of uniform size |
US4229265A (en) * | 1979-08-09 | 1980-10-21 | The Mead Corporation | Method for fabricating and the solid metal orifice plate for a jet drop recorder produced thereby |
US4282533A (en) * | 1980-02-22 | 1981-08-04 | Celanese Corporation | Precision orifice nozzle devices for ink jet printing apparati and the process for their manufacture |
US4430784A (en) * | 1980-02-22 | 1984-02-14 | Celanese Corporation | Manufacturing process for orifice nozzle devices for ink jet printing apparati |
US4357614A (en) * | 1980-10-07 | 1982-11-02 | Fuji Xerox Co., Ltd. | Ink particle jetting device for multi-nozzle ink jet printer |
US4455192A (en) * | 1981-05-07 | 1984-06-19 | Fuji Xerox Company, Ltd. | Formation of a multi-nozzle ink jet |
EP0067948A1 (en) * | 1981-06-18 | 1982-12-29 | International Business Machines Corporation | Method and apparatus for producing liquid drops on demand |
US4522893A (en) * | 1981-10-30 | 1985-06-11 | International Business Machines Corporation | Contact device for releasably connecting electrical components |
US4555062A (en) * | 1983-04-05 | 1985-11-26 | Hewlett-Packard Company | Anti-wetting in fluid nozzles |
US4583690A (en) * | 1983-04-05 | 1986-04-22 | Hewlett-Packard Company | Anti-wetting in fluid nozzles |
EP0177316B1 (en) * | 1984-09-28 | 1991-06-19 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating an ink jet printer nozzle member |
EP0177316A2 (en) * | 1984-09-28 | 1986-04-09 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating an ink jet printer nozzle member |
US4733823A (en) * | 1984-10-15 | 1988-03-29 | At&T Teletype Corporation | Silicon nozzle structures and method of manufacture |
EP0178596A3 (en) * | 1984-10-15 | 1987-09-16 | At & T Teletype Corporation | Silicon nozzle structures and method of manufacture |
EP0178596A2 (en) * | 1984-10-15 | 1986-04-23 | AT & T Teletype Corporation | Silicon nozzle structures and method of manufacture |
US4756508A (en) * | 1985-02-21 | 1988-07-12 | Ford Motor Company | Silicon valve |
US4647013A (en) * | 1985-02-21 | 1987-03-03 | Ford Motor Company | Silicon valve |
US4628576A (en) * | 1985-02-21 | 1986-12-16 | Ford Motor Company | Method for fabricating a silicon valve |
US4768751A (en) * | 1987-10-19 | 1988-09-06 | Ford Motor Company | Silicon micromachined non-elastic flow valves |
US5176360A (en) * | 1988-03-14 | 1993-01-05 | Baxter International Inc. | Infusor having fixed and variable flow rate control mechanisms |
WO1989008787A1 (en) * | 1988-03-14 | 1989-09-21 | Baxter International Inc. | Systems having fixed and variable flow rate control mechanisms |
US5014750A (en) * | 1988-03-14 | 1991-05-14 | Baxter International Inc. | Systems having fixed and variable flow rate control mechanisms |
US5009251A (en) * | 1988-11-15 | 1991-04-23 | Baxter International, Inc. | Fluid flow control |
US5662271A (en) * | 1990-03-21 | 1997-09-02 | Boehringer Ingelheim International Gmbh | Atomizing devices and methods |
US5497944A (en) * | 1990-03-21 | 1996-03-12 | Dmw (Technology) Limited | Atomising devices and methods |
US5402937A (en) * | 1990-09-21 | 1995-04-04 | Robert Bosch Gmbh | Perforated body and valve with perforated body |
US5402943A (en) * | 1990-12-04 | 1995-04-04 | Dmw (Technology) Limited | Method of atomizing including inducing a secondary flow |
US5244154A (en) * | 1991-02-09 | 1993-09-14 | Robert Bosch Gmbh | Perforated plate and fuel injection valve having a performated plate |
US5649359A (en) * | 1992-08-31 | 1997-07-22 | Canon Kabushiki Kaisha | Ink jet head manufacturing method using ion machining and ink jet head manufactured thereby |
US5703630A (en) * | 1992-08-31 | 1997-12-30 | Canon Kabushiki Kaisha | Ink jet head manufacturing method using ion machining and ink jet head manufactured thereby |
US6503362B1 (en) | 1992-09-29 | 2003-01-07 | Boehringer Ingelheim International Gmbh | Atomizing nozzle an filter and spray generating device |
US5911851A (en) * | 1992-09-29 | 1999-06-15 | Boehringer Ingelheim International Gmbh | Atomizing nozzle and filter and spray generating device |
US7246615B2 (en) | 1992-09-29 | 2007-07-24 | Boehringer International Gmbh | Atomising nozzle and filter and spray generating device |
US20030075623A1 (en) * | 1992-09-29 | 2003-04-24 | Frank Bartels | Atomising nozzel and filter and spray generating device |
US5547094A (en) * | 1992-09-29 | 1996-08-20 | Dmw (Technology) Ltd. | Method for producing atomizing nozzle assemblies |
US6007676A (en) * | 1992-09-29 | 1999-12-28 | Boehringer Ingelheim International Gmbh | Atomizing nozzle and filter and spray generating device |
US5472143A (en) * | 1992-09-29 | 1995-12-05 | Boehringer Ingelheim International Gmbh | Atomising nozzle and filter and spray generation device |
US5492277A (en) * | 1993-02-17 | 1996-02-20 | Nippondenso Co., Ltd. | Fluid injection nozzle |
US5569187A (en) * | 1994-08-16 | 1996-10-29 | Texas Instruments Incorporated | Method and apparatus for wireless chemical supplying |
WO1996034639A1 (en) * | 1995-05-03 | 1996-11-07 | Tricumed Gmbh | Implantable diffusion pump |
US5908414A (en) * | 1995-05-03 | 1999-06-01 | Tricumed Gmbh | Implantable infusion pump |
US5989445A (en) * | 1995-06-09 | 1999-11-23 | The Regents Of The University Of Michigan | Microchannel system for fluid delivery |
US5992769A (en) * | 1995-06-09 | 1999-11-30 | The Regents Of The University Of Michigan | Microchannel system for fluid delivery |
US6238585B1 (en) * | 1995-07-03 | 2001-05-29 | Seiko Epson Corporation | Method for manufacturing an ink-jet head having nozzle openings with a constant width |
US5992974A (en) * | 1995-07-03 | 1999-11-30 | Seiko Epson Corporation | Ink-jet head having nozzle openings with a constant width and manufacturing method thereof |
FR2736303A1 (en) * | 1995-07-03 | 1997-01-10 | Seiko Epson Corp | INK JET HEAD AND METHOD FOR MANUFACTURING THE SAME |
DE19626822B4 (en) * | 1995-07-03 | 2007-08-09 | Seiko Epson Corp. | Ink jet head and method of manufacturing a nozzle plate |
DE19626822A1 (en) * | 1995-07-03 | 1997-01-30 | Seiko Epson Corp | Inkjet head and its manufacturing process |
US5658471A (en) * | 1995-09-22 | 1997-08-19 | Lexmark International, Inc. | Fabrication of thermal ink-jet feed slots in a silicon substrate |
US5757400A (en) * | 1996-02-01 | 1998-05-26 | Spectra, Inc. | High resolution matrix ink jet arrangement |
WO1997028000A1 (en) * | 1996-02-01 | 1997-08-07 | Spectra, Inc. | High resolution matrix ink jet arrangement |
US6378788B1 (en) * | 1996-07-08 | 2002-04-30 | Corning Incorporated | Rayleigh-breakup atomizing devices and methods of making rayleigh-breakup atomizing devices |
US6352209B1 (en) | 1996-07-08 | 2002-03-05 | Corning Incorporated | Gas assisted atomizing devices and methods of making gas-assisted atomizing devices |
US6189214B1 (en) | 1996-07-08 | 2001-02-20 | Corning Incorporated | Gas-assisted atomizing devices and methods of making gas-assisted atomizing devices |
US6513736B1 (en) | 1996-07-08 | 2003-02-04 | Corning Incorporated | Gas-assisted atomizing device and methods of making gas-assisted atomizing devices |
US6189813B1 (en) | 1996-07-08 | 2001-02-20 | Corning Incorporated | Rayleigh-breakup atomizing devices and methods of making rayleigh-breakup atomizing devices |
US5901425A (en) * | 1996-08-27 | 1999-05-11 | Topaz Technologies Inc. | Inkjet print head apparatus |
EP0975465A4 (en) * | 1997-04-18 | 2000-05-10 | Topaz Tech Inc | Nozzle plate for an ink jet print head |
EP0975465A1 (en) * | 1997-04-18 | 2000-02-02 | Topaz Technologies, Inc. | Nozzle plate for an ink jet print head |
US6863375B2 (en) * | 1997-05-14 | 2005-03-08 | Seiko Epson Corporation | Ejection device and inkjet head with silicon nozzle plate |
US6568791B2 (en) * | 1997-07-04 | 2003-05-27 | Canon Kabushiki Kaisha | Ink jet recording head and a method of manufacture therefor |
US20060032494A1 (en) * | 1997-09-26 | 2006-02-16 | Boehringer Ingelheim International Gmbh | Microstructured filter |
US7645383B2 (en) | 1997-09-26 | 2010-01-12 | Boehringer Ingelheim International Gmbh | Microstructured filter |
US6977042B2 (en) | 1997-09-26 | 2005-12-20 | Klaus Kadel | Microstructured filter |
US20040159319A1 (en) * | 1997-09-26 | 2004-08-19 | Boehringer Ingelheim International Gmbh | Microstructured filter |
US6846413B1 (en) | 1997-09-26 | 2005-01-25 | Boehringer Ingelheim International Gmbh | Microstructured filter |
US20030167796A1 (en) * | 1997-12-19 | 2003-09-11 | Hawtof Daniel W. | Burner and method for producing metal oxide soot |
US6837076B2 (en) | 1997-12-19 | 2005-01-04 | Corning Incorporated | Method of producing oxide soot using a burner with a planar burner face |
US20020172619A1 (en) * | 1998-09-17 | 2002-11-21 | Moon James E. | Integrated monolithic microfabricated electrospray and liquid chromatography system and method |
US6855251B2 (en) | 1998-09-17 | 2005-02-15 | Advion Biosciences, Inc. | Microfabricated electrospray device |
US6363606B1 (en) * | 1998-10-16 | 2002-04-02 | Agere Systems Guardian Corp. | Process for forming integrated structures using three dimensional printing techniques |
US6768107B2 (en) | 1999-03-02 | 2004-07-27 | Advion Biosciences, Inc. | Integrated monolithic microfabricated dispensing nozzle and liquid chromatography-electrospray system and method |
US6787766B2 (en) | 1999-03-02 | 2004-09-07 | Advion Biosciences, Inc. | Integrated monolithic microfabricated dispensing nozzle and liquid chromatography-electrospray system and method |
US6822231B2 (en) | 1999-03-02 | 2004-11-23 | Advion Biosciences, Inc. | Integrated monolithic microfabricated dispensing nozzle and liquid chromatography-electrospray system and method |
US6633031B1 (en) | 1999-03-02 | 2003-10-14 | Advion Biosciences, Inc. | Integrated monolithic microfabricated dispensing nozzle and liquid chromatography-electrospray system and method |
US6423476B1 (en) * | 1999-12-22 | 2002-07-23 | Samsung Electronics Co., Ltd. | Method of manufacturing a nozzle plate |
US6627882B2 (en) | 1999-12-30 | 2003-09-30 | Advion Biosciences, Inc. | Multiple electrospray device, systems and methods |
US6723985B2 (en) | 1999-12-30 | 2004-04-20 | Advion Biosciences, Inc. | Multiple electrospray device, systems and methods |
US6596988B2 (en) | 2000-01-18 | 2003-07-22 | Advion Biosciences, Inc. | Separation media, multiple electrospray nozzle system and method |
US6956207B2 (en) | 2000-01-18 | 2005-10-18 | Advion Bioscience, Inc. | Separation media, multiple electrospray nozzle system and method |
US6663231B2 (en) | 2000-02-24 | 2003-12-16 | Samsung Electronics Co., Ltd. | Monolithic nozzle assembly formed with mono-crystalline silicon wafer and method for manufacturing the same |
US20040063245A1 (en) * | 2001-01-16 | 2004-04-01 | Infineon Technologies Ag | Method of fabricating an electronic component |
US6872594B2 (en) * | 2001-01-16 | 2005-03-29 | Infineon Technologies Ag | Method of fabricating an electronic component |
US20060177787A1 (en) * | 2001-04-12 | 2006-08-10 | Atock Co., Ltd | Quartz glass single hole nozzle for feeding fluid and quartz glass multihole burner head for feeding fluid |
US7094049B2 (en) * | 2001-12-04 | 2006-08-22 | Atock Co., Ltd. | Quartz glass single hole nozzle for feeding fluid and quartz glass multi-hole burner head for feeding fluid |
US20050003317A1 (en) * | 2001-12-04 | 2005-01-06 | Toru Mizuno | Quartz glass single hole nozzle and quartz glass multi-hole burner head for feeding fluid |
US20050116069A1 (en) * | 2002-02-21 | 2005-06-02 | Kazuhiro Murata | Ultrafine fluid jet apparatus |
US7434912B2 (en) * | 2002-02-21 | 2008-10-14 | National Institute Of Advanced Industrial Science And Technology | Ultrafine fluid jet apparatus |
US20070007627A1 (en) * | 2003-09-09 | 2007-01-11 | Csg Solar Ag | Method of forming openings in an organic resin material |
US7960206B2 (en) | 2003-09-09 | 2011-06-14 | Csg Solar Ag | Adjustment of masks by re-flow |
US20060292821A1 (en) * | 2003-09-09 | 2006-12-28 | Csg Solar Ag | Method of etching silicon |
EP1665353A4 (en) * | 2003-09-09 | 2006-11-29 | Csg Solar Ag | Improved method of etching silicon |
US7592201B2 (en) | 2003-09-09 | 2009-09-22 | Csg Solar Ag | Adjustments of masks by re-flow |
US7585781B2 (en) | 2003-09-09 | 2009-09-08 | Csg Solar Ag | Method of forming openings in an organic resin material |
US20090317938A1 (en) * | 2003-09-09 | 2009-12-24 | Csg Solar Ag | Adjustment of masks by re-flow |
US20080166832A1 (en) * | 2003-09-09 | 2008-07-10 | Csg Solar Ag | Adjustments of Masks by Re-Flow |
US7446051B2 (en) | 2003-09-09 | 2008-11-04 | Csg Solar Ag | Method of etching silicon |
EP1665353A1 (en) * | 2003-09-09 | 2006-06-07 | CSG Solar, AG | Improved method of etching silicon |
US8078252B2 (en) | 2003-10-21 | 2011-12-13 | Kipke Daryl R | Intracranial neural interface system |
US7979105B2 (en) | 2003-10-21 | 2011-07-12 | The Regents Of The University Of Michigan | Intracranial neural interface system |
US8412302B2 (en) | 2003-10-21 | 2013-04-02 | The Regents Of The University Of Michigan | Intracranial neural interface system |
US20110046470A1 (en) * | 2003-10-21 | 2011-02-24 | Kipke Daryl R | Intracranial neural interface system |
US20090253977A1 (en) * | 2003-10-21 | 2009-10-08 | Kipke Daryl R | Intracranial neural interface system |
US8377319B2 (en) | 2004-08-05 | 2013-02-19 | Fujifilm Dimatix, Inc. | Print head nozzle formation |
US20080128387A1 (en) * | 2004-08-05 | 2008-06-05 | Fujifilm Dimatix, Inc. | Print Head Nozzle Formation |
US7347532B2 (en) | 2004-08-05 | 2008-03-25 | Fujifilm Dimatix, Inc. | Print head nozzle formation |
US20060028508A1 (en) * | 2004-08-05 | 2006-02-09 | Zhenfang Chen | Print head nozzle formation |
US9014796B2 (en) | 2005-06-14 | 2015-04-21 | Regents Of The University Of Michigan | Flexible polymer microelectrode with fluid delivery capability and methods for making same |
US20110154655A1 (en) * | 2005-10-07 | 2011-06-30 | Hetke Jamille F | Modular multichannel microelectrode array and methods of making same |
US8800140B2 (en) | 2005-10-07 | 2014-08-12 | Neuronexus Technologies, Inc. | Method of making a modular multichannel microelectrode array |
US20070123765A1 (en) * | 2005-10-07 | 2007-05-31 | Hetke Jamille F | Modular multichannel microelectrode array and methods of making same |
US7941202B2 (en) | 2005-10-07 | 2011-05-10 | Neuronexus Technologies | Modular multichannel microelectrode array and methods of making same |
US8463353B2 (en) | 2006-01-26 | 2013-06-11 | The Regents Of The University Of Michigan | Microelectrode with laterally extending platform for reduction of tissue encapsulation |
US20090299167A1 (en) * | 2006-01-26 | 2009-12-03 | Seymour John P | Microelectrode with laterally extending platform for reduction of tissue encapsulation |
US8195267B2 (en) | 2006-01-26 | 2012-06-05 | Seymour John P | Microelectrode with laterally extending platform for reduction of tissue encapsulation |
US20080100667A1 (en) * | 2006-10-25 | 2008-05-01 | Kabushiki Kaisha Toshiba | Nozzle plate, method for producing nozzle plate, droplet dispensing head, method for producing droplet dispensing head, and droplet dispensing device |
US8869400B2 (en) * | 2006-10-25 | 2014-10-28 | Kabushiki Kaisha Toshiba | Method for manufacturing a nozzle plate and a droplet dispensing head |
US9604051B2 (en) | 2007-02-26 | 2017-03-28 | Medtronic Bakken Research Center B.V. | Neural interface system |
US20080208283A1 (en) * | 2007-02-26 | 2008-08-28 | Rio Vetter | Neural Interface System |
US8731673B2 (en) | 2007-02-26 | 2014-05-20 | Sapiens Steering Brain Stimulation B.V. | Neural interface system |
US11324945B2 (en) | 2007-02-26 | 2022-05-10 | Medtronic Bakken Research Center B.V. | Neural interface system |
US10357649B2 (en) | 2007-02-26 | 2019-07-23 | Medtronic Bakken Research Center B.V. | Neural interface system |
US20100276505A1 (en) * | 2007-09-26 | 2010-11-04 | Roger Earl Smith | Drilling in stretched substrates |
US11690548B2 (en) | 2007-10-17 | 2023-07-04 | Neuronexus Technologies, Inc. | Method for implanting an implantable device in body tissue |
US20090187196A1 (en) * | 2007-10-17 | 2009-07-23 | Vetter Rio J | Guide tube for an implantable device system |
US8224417B2 (en) | 2007-10-17 | 2012-07-17 | Neuronexus Technologies, Inc. | Guide tube for an implantable device system |
US8958862B2 (en) | 2007-10-17 | 2015-02-17 | Neuronexus Technologies, Inc. | Implantable device including a resorbable carrier |
US10034615B2 (en) | 2007-10-17 | 2018-07-31 | Neuronexus Technologies, Inc. | Method for implanting an implantable device in body tissue |
US8805468B2 (en) | 2007-10-17 | 2014-08-12 | Neuronexus Technologies, Inc. | Guide tube for an implantable device system |
US8565894B2 (en) | 2007-10-17 | 2013-10-22 | Neuronexus Technologies, Inc. | Three-dimensional system of electrode leads |
US20090118806A1 (en) * | 2007-10-17 | 2009-05-07 | Vetter Rio J | Three-dimensional system of electrode leads |
US20090132042A1 (en) * | 2007-10-17 | 2009-05-21 | Hetke Jamille F | Implantable device including a resorbable carrier |
US8498720B2 (en) | 2008-02-29 | 2013-07-30 | Neuronexus Technologies, Inc. | Implantable electrode and method of making the same |
US9656054B2 (en) | 2008-02-29 | 2017-05-23 | Neuronexus Technologies, Inc. | Implantable electrode and method of making the same |
US20090234426A1 (en) * | 2008-02-29 | 2009-09-17 | Pellinen David S | Implantable electrode and method of making the same |
US10688298B2 (en) | 2008-02-29 | 2020-06-23 | Neuronexus Technologies, Inc. | Implantable electrode and method of making the same |
US9265928B2 (en) | 2008-02-29 | 2016-02-23 | Greatbatch Ltd. | Implantable electrode and method of making the same |
US20090240314A1 (en) * | 2008-03-24 | 2009-09-24 | Kong K C | Implantable electrode lead system with a three dimensional arrangement and method of making the same |
US9289142B2 (en) | 2008-03-24 | 2016-03-22 | Neuronexus Technologies, Inc. | Implantable electrode lead system with a three dimensional arrangement and method of making the same |
US20100141709A1 (en) * | 2008-10-31 | 2010-06-10 | Gregory Debrabander | Shaping a Nozzle Outlet |
US8197029B2 (en) * | 2008-12-30 | 2012-06-12 | Fujifilm Corporation | Forming nozzles |
US8641171B2 (en) | 2008-12-30 | 2014-02-04 | Fujifilm Corporation | Forming nozzles |
US20100165048A1 (en) * | 2008-12-30 | 2010-07-01 | Gregory Debrabander | Forming nozzles |
US20110093052A1 (en) * | 2009-10-16 | 2011-04-21 | Anderson David J | Neural interface system |
US8332046B2 (en) | 2009-10-16 | 2012-12-11 | Neuronexus Technologies, Inc. | Neural interface system |
US9643027B2 (en) | 2009-11-05 | 2017-05-09 | Neuronexus Technologies, Inc. | Waveguide neural interface device |
US20110112591A1 (en) * | 2009-11-05 | 2011-05-12 | Seymour John P | Waveguide neural interface device |
US8870857B2 (en) | 2009-11-05 | 2014-10-28 | Greatbatch Ltd. | Waveguide neural interface device |
US9155861B2 (en) | 2010-09-20 | 2015-10-13 | Neuronexus Technologies, Inc. | Neural drug delivery system with fluidic threads |
Also Published As
Publication number | Publication date |
---|---|
FR2296504A1 (en) | 1976-07-30 |
FR2296504B1 (en) | 1978-05-12 |
DE2555462C2 (en) | 1982-06-03 |
JPS5516070B2 (en) | 1980-04-28 |
DE2555462A1 (en) | 1976-07-08 |
GB1492465A (en) | 1977-11-23 |
CA1037519A (en) | 1978-08-29 |
IT1054354B (en) | 1981-11-10 |
JPS5184641A (en) | 1976-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3921916A (en) | Nozzles formed in monocrystalline silicon | |
US4007464A (en) | Ink jet nozzle | |
EP0430593B1 (en) | Method of cutting a silicon wafer by orientation dependent etching | |
Bassous et al. | The fabrication of high precision nozzles by the anisotropic etching of (100) silicon | |
JP3127002B2 (en) | Low-temperature, single-sided, multi-step etching process for producing large and small structures | |
US4957592A (en) | Method of using erodable masks to produce partially etched structures in ODE wafer structures | |
US4047184A (en) | Charge electrode array and combination for ink jet printing and method of manufacture | |
US4014029A (en) | Staggered nozzle array | |
EP0328281B1 (en) | Directable aperture etched in silicon | |
US5160577A (en) | Method of fabricating an aperture plate for a roof-shooter type printhead | |
EP0238694B1 (en) | Method of forming identically positioned alignment marks on opposite sides of a semiconductor wafer | |
US3936329A (en) | Integral honeycomb-like support of very thin single crystal slices | |
DE69730667T2 (en) | A method of making a via, use of this method of making a silicon substrate having such a via, or apparatus with that substrate, methods of making an inkjet printhead, and use of this method of making an inkjet printhead | |
US5096535A (en) | Process for manufacturing segmented channel structures | |
US4470875A (en) | Fabrication of silicon devices requiring anisotropic etching | |
US4108715A (en) | Method for machining surfaces of semiconductor substrates | |
GB1493667A (en) | Nozzle structure and method of making such structures | |
CA2047804A1 (en) | Thermal ink jet printhead with pre-diced nozzle face and method of fabrication therefor | |
US5282926A (en) | Method of anisotropically etching monocrystalline, disk-shaped wafers | |
US4008111A (en) | AlN masking for selective etching of sapphire | |
US5338400A (en) | Micromachining process for making perfect exterior corner in an etchable substrate | |
US5716533A (en) | Method of fabricating ink jet printheads | |
KR930009109B1 (en) | Silicon nozzle structure | |
JPS6043309B2 (en) | Multi nozzle orifice plate | |
US5971527A (en) | Ink jet channel wafer for a thermal ink jet printhead |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: IBM INFORMATION PRODUCTS CORPORATION, 55 RAILROAD Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:INTERNATIONAL BUSINESS MACHINES CORPORATION;REEL/FRAME:005678/0098 Effective date: 19910326 Owner name: MORGAN BANK Free format text: SECURITY INTEREST;ASSIGNOR:IBM INFORMATION PRODUCTS CORPORATION;REEL/FRAME:005678/0062 Effective date: 19910327 |